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NTMD6N04R2G Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.5W
Terminal Form GULL WING
Base Part Number NTMD6N04
Pin Count 8
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 15 ns
Power - Max 1.29W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NTMD6N04R2G Documents

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