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NUS5530MNR2G Tech Specifications

Category Transistors - Special Purpose
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Surface Mount YES
Number of Pins 8Pins
Collector-Emitter Saturation Voltage -100mV
Number of Elements 1 Element
Voltage Rated 35V PNP 20V P-Channel
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications General Purpose
Current Rating (Amps) 2A PNP 3.9A P-Channel
Max Power Dissipation 2.5W
Peak Reflow Temperature (Cel) 260
Current Rating 3.9A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NUS5530MN
Pin Count 8
Rise Time-Max 55ns
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 635mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN, P-Channel
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 2A
Continuous Drain Current (ID) -3.9A
Gate to Source Voltage (Vgs) -35V
Max Frequency 100MHz
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Collector Base Voltage (VCBO) -55V
Emitter Base Voltage (VEBO) -5V
DC Current Gain-Min (hFE) 100
Drain to Source Resistance 200Ohm
VCEsat-Max 0.3 V
Fall Time-Max (tf) 70ns
Height 950μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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