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NUS5531MTR2G Tech Specifications

Category Transistors - Special Purpose
Manufacturer ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Number of Pins 8Pins
Number of Elements 1 Element
Turn Off Delay Time 80 ns
Voltage Rated 20V PNP 12V P-Channel
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications General Purpose
Current Rating (Amps) 2A PNP 5.47A P-Channel
Terminal Position DUAL
Current Rating 5.47A
Pin Count 8
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.46W
Case Connection DRAIN
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Rise Time 17.5ns
Fall Time (Typ) 17.5 ns
Transistor Type PNP, P-Channel
Continuous Drain Current (ID) 5.47A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.4A
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Collector Current-Max (IC) 2A
DC Current Gain-Min (hFE) 150
Drain to Source Resistance 32mOhm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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