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NVMFD5483NLWFT1G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) | |
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 6.4A | |
| Turn Off Delay Time | 37.5 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 3.1W |
| Pin Count | 8 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Turn On Delay Time | 6.8 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 668pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V | |
| Rise Time | 10.3ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Fall Time (Typ) | 23.5 ns | |
| Continuous Drain Current (ID) | 24A | |
| Gate to Source Voltage (Vgs) | 20V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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NVMFD5483NLWFT1G Documents
Download datasheets and manufacturer documentation for NVMFD5483NLWFT1G
- DatasheetsNVMFD5483NL(WF) NVMFD5483NLWFT1G-ON-Semiconductor-datasheet-37177764.pdf
- Environmental InformationMaterial Declaration NVMFD5483NLWFT1G
- RohsStatementON-Semiconductor-NVMFD5483NLWFT1G.pdf
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