ON Semiconductor NVMFD5853NLWFT1G MOSFETs Transistors Arrays
40V
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NVMFD5853NLWFT1G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) | |
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Published | 2014 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~175°C TJ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 3W | |
| Terminal Form | FLAT | |
| Pin Count | 8 | |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-F6 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Drain to Source Voltage (Vdss) | 40V | |
| Continuous Drain Current (ID) | 12A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 34A | |
| Drain-source On Resistance-Max | 0.015Ohm | |
| Pulsed Drain Current-Max (IDM) | 165A | |
| DS Breakdown Voltage-Min | 40V | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
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NVMFD5853NLWFT1G Documents
Download datasheets and manufacturer documentation for NVMFD5853NLWFT1G
- DatasheetsNVMFD5853NL(WF) NVMFD5853NLWFT1G-ON-Semiconductor-datasheet-37177768.pdf
- Environmental InformationMaterial Declaration NVMFD5853NLWFT1G
- RohsStatementON-Semiconductor-NVMFD5853NLWFT1G.pdf
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