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NVMFD5C674NLWFT1G Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Surface Mount YES
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Ta 42A Tc
Number of Elements 2 Elements
Published 2013
Series Automotive, AEC-Q101
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W Ta 37W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 14.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 0.0204Ohm
Pulsed Drain Current-Max (IDM) 119A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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