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SMUN5233DW1T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Weight 7.512624mg
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 80
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 10
Max Power Dissipation 187mW
Terminal Form GULL WING
Base Part Number MUN52**DW1T
Pin Count 6
Reference Standard AEC-Q101
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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