SS9018GBU Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 179mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
hFEMin 28
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Max Power Dissipation 400mW
Terminal Position BOTTOM
Current Rating 50mA
Frequency 1.1GHz
Element Configuration Single
Power Dissipation 400mW
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 72 @ 1mA 5V
Transition Frequency 1100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 50mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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