BPX38-4-Z Tech Specifications

Category Optical Sensors - Phototransistors
Manufacturer OSRAM
Material Silicon
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Phototransistor Type Phototransistor
Lens Shape Type Domed
Number of Channels per Chip 1
Half Intensity Angle Degrees (°) 80
Viewing Orientation Top View
Peak Wavelength (nm) 880
Maximum Rise Time (ns) 15000
Maximum Fall Time (ns) 15000
Maximum Light Current (uA) 900
Maximum Collector Current (mA) 50
Maximum Dark Current (nA) 100
Maximum Collector-Emitter Voltage (V) 50
Maximum Collector-Emitter Saturation Voltage (V) 0.2
Maximum Power Dissipation (mW) 220
Fabrication Technology NPN Transistor
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Mounting Through Hole
Package Height 5.5(Max)
PCB changed 3
Standard Package Name TO-206-AA
Supplier Package TO-18
Lead Shape Through Hole
Part Status Obsolete
Type Chip
Pin Count 3
Polarity NPN
Diameter 5.6(Max)
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