OSRAM Opto Semiconductors, Inc. BPX82-Z Phototransistors
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BPX82-Z Tech Specifications
| Category | Optical Sensors - Phototransistors | |
| Manufacturer | OSRAM | |
| Material | Silicon | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Phototransistor Type | Phototransistor | |
| Lens Shape Type | Domed | |
| Number of Channels per Chip | 3Channels per Chips | |
| Half Intensity Angle Degrees (°) | 36 | |
| Viewing Orientation | Top View | |
| Peak Wavelength (nm) | 850 | |
| Maximum Light Current (uA) | 320(Min) | |
| Maximum Collector Current (mA) | 50 | |
| Maximum Dark Current (nA) | 50 |
| Maximum Collector-Emitter Voltage (V) | 35 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15 | |
| Maximum Power Dissipation (mW) | 90 | |
| Fabrication Technology | NPN Transistor | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 80 | |
| Mounting | Through Hole | |
| Package Height | 3.6(Max) | |
| Package Width | 2.1(Max) | |
| Package Length | 7.4(Max) | |
| PCB changed | 6 | |
| Part Status | Obsolete | |
| Type | Array | |
| Pin Count | 6 | |
| Polarity | NPN | |
| Lens Color | Transparent |
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