OSRAM Opto Semiconductors, Inc. Q65111A4760 Phototransistors
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Q65111A4760 Tech Specifications
| Category | Optical Sensors - Phototransistors | |
| Manufacturer | OSRAM | |
| Material | Silicon | |
| EU RoHS | Compliant | |
| HTS | 8541.49.70.80 | |
| Phototransistor Type | Phototransistor | |
| Lens Shape Type | Domed | |
| Number of Channels per Chip | 1 | |
| Half Intensity Angle Degrees (°) | 25 | |
| Viewing Orientation | Top View | |
| Peak Wavelength (nm) | 880 | |
| Maximum Rise Time (ns) | 10000 | |
| Maximum Fall Time (ns) | 10000 | |
| Maximum Light Current (uA) | 2200 | |
| Maximum Collector Current (mA) | 50 | |
| Maximum Dark Current (nA) | 50 |
| Maximum Emitter-Collector Voltage (V) | 7 | |
| Maximum Collector-Emitter Voltage (V) | 35 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.14 | |
| Maximum Power Dissipation (mW) | 200 | |
| Fabrication Technology | NPN Transistor | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Mounting | Through Hole | |
| Package Height | 9(Max) | |
| PCB changed | 2 | |
| Supplier Package | T-1 3/4 | |
| Part Status | Unconfirmed | |
| Pin Count | 2 | |
| Polarity | NPN | |
| Diameter | 5.9(Max) |
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