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DMG264120R Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Panasonic
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2010
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISITANCE RATIO 1
HTS Code 8541.21.00.95
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMG26412
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -500mA
Resistor - Emitter Base (R2) 4.7k Ω
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
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