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DRA3144E0L Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Panasonic
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 250mV
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISITANCE RATIO 1
HTS Code 8541.21.00.95
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DRA3144
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -6V
Resistor - Base (R1) 47 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 500μm
Length 1.2mm
RoHS Status RoHS Compliant
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DRA3144E0L Documents

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