DSA5001R0L Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Panasonic
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage -500mV
Number of Elements 1 Element
hFEMin 210
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DSA5001
JESD-30 Code R-PDSO-F3
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type PNP
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Max Frequency 150MHz
Transition Frequency 150MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -7V
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
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