Power Integrations FF800R17KP4_B2 IGBTs Modules
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FF800R17KP4_B2 Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | Power Integrations | |
| Surface Mount | NO | |
| Number of Terminals | 10Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | MODULE-10 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Turn-on Time-Nom (ton) | 790 ns | |
| Turn-off Time-Nom (toff) | 1650 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | FF800R17KP4_B2 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 1.37 |
| Part Package Code | MODULE | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Subcategory | Insulated Gate BIP Transistors | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 10 | |
| JESD-30 Code | R-XUFM-X10 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Case Connection | ISOLATED | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4850 W | |
| Collector Current-Max (IC) | 1200 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.2 V |
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