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UF3C065080B7S

Transistors - FETs, MOSFETs - Single
Qorvo
Package / Case D2PAK-7
Vds - Drain-Source Breakdown Voltage 650 V
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 136.4 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 25 V, + 25 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 23 nC
Rds On - Drain-Source Resistance 85 mOhms
Id - Continuous Drain Current 27 A
Series UF3C
Technology SiC
Number of Channels 1 ChannelChannel
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