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UF3C120080K3S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Qorvo
Channel Mode Enhancement
Id - Continuous Drain Current 33 A
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Pd - Power Dissipation 254.2 W
Qg - Gate Charge 51 nC
Rds On - Drain-Source Resistance 100 mOhms
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 6 V
Technology SiC
Number of Channels 1 ChannelChannel
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