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UF3SC065007K4S Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Qorvo | |
Package / Case | TO-247-4 | |
Vds - Drain-Source Breakdown Voltage | 650 V | |
Vgs th - Gate-Source Threshold Voltage | 6 V | |
Pd - Power Dissipation | 789 W | |
Transistor Polarity | N-Channel | |
Maximum Operating Temperature | + 175 C | |
Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Minimum Operating Temperature | - 55 C | |
Mounting Styles | Through Hole | |
Channel Mode | Enhancement | |
Qg - Gate Charge | 214 nC | |
Rds On - Drain-Source Resistance | 9 mOhms | |
Id - Continuous Drain Current | 120 A | |
Series | UF3SC | |
Technology | SiC | |
Number of Channels | 1 ChannelChannel |
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