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UF3SC120009K4S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Qorvo
Package / Case TO-247-4
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 789 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge 234 nC
Rds On - Drain-Source Resistance 11 mOhms
Id - Continuous Drain Current 120 A
Series UF3SC
Technology SiC
Number of Channels 1 ChannelChannel
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