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UF3SC120040B7S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Qorvo
Package / Case D2PAK-7
Vgs th - Gate-Source Threshold Voltage 6 V
Vgs - Gate-Source Voltage - 25 V, + 25 V
Vds - Drain-Source Breakdown Voltage 1.2 kV
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 35 mOhms
Qg - Gate Charge 43 nC
Pd - Power Dissipation 214 W
Mounting Styles SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Id - Continuous Drain Current 47 A
Channel Mode Enhancement
Series UF3SC
Technology SiC
Number of Channels 1 ChannelChannel
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