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UJ4SC075005L8S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Qorvo
Package / Case MO-229-8
Vds - Drain-Source Breakdown Voltage 750 V
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 1.153 kW
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 164 nC
Rds On - Drain-Source Resistance 5 mOhms
Id - Continuous Drain Current 120 A
Technology SiC
Number of Channels 1 ChannelChannel
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