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UJ4SC075008L8S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Qorvo
Package / Case MO-229-8
Channel Mode Enhancement
Id - Continuous Drain Current 106 A
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Pd - Power Dissipation 600 W
Qg - Gate Charge 75 nC
Rds On - Drain-Source Resistance 8 mOhms
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 750 V
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 5.5 V
Technology SiC
Number of Channels 1 ChannelChannel
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