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2N2222A Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Rectron
Package / Case TO-18-3
Material Si
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.75
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 75
Maximum Collector-Emitter Voltage (V) 40
Maximum Collector-Emitter Voltage Range (V) 40 to 50
Maximum Collector-Emitter Saturation Voltage (V) 0.3@15mA@150mA|1@50mA@500mA
Maximum Emitter Base Voltage (V) 6
Maximum Base Emitter Saturation Voltage (V) 1.2@15mA@150mA|2@50mA@500mA
Maximum DC Collector Current (A) 0.8
Maximum DC Collector Current Range (A) 0.5 to 2
Maximum Emitter Cut-Off Current (nA) 10
Maximum Collector Cut-Off Current (nA) 10
Minimum DC Current Gain 35@0.1mA@10V|50@1mA@10V|75@10mA@10V
Minimum DC Current Gain Range 30 to 50|50 to 120
Typical Input Capacitance (pF) 25(Max)
Typical Output Capacitance (pF) 8(Max)
Maximum Power Dissipation (mW) 500
Maximum Transition Frequency (MHz) 300(Min)
Maximum Noise Figure (dB) 4
Maximum Rise Time (ns) 25
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Mounting Through Hole
Package Height 5.33(Max)
PCB changed 3
Supplier Package TO-18
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 500 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Collector-Emitter Saturation Voltage 1 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 10000
Mounting Styles Through Hole
Gain Bandwidth Product fT 300 MHz
Manufacturer Rectron
Brand Rectron
Maximum DC Collector Current 800 mA
DC Current Gain hFE Max 40
RoHS Details
Collector- Emitter Voltage VCEO Max 40 V
Packaging Ammo Pack
Part Status Active
Type NPN
Subcategory Transistors
Technology Si
Pin Count 3
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 75 V
Continuous Collector Current 800 mA
Product Category Bipolar Transistors - BJT
Diameter 5.84(Max)
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