2N2907A Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Rectron
Package / Case TO-18-3
Material Si
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.75
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 60
Maximum Collector-Emitter Voltage (V) 60
Maximum Collector-Emitter Voltage Range (V) 60 to 70
Maximum Collector-Emitter Saturation Voltage (V) 0.4@15mA@150mA|1.6@50mA@500mA
Maximum Emitter Base Voltage (V) 5
Maximum Base Emitter Saturation Voltage (V) 1.3@15mA@150mA|2.6@50mA@500mA
Maximum DC Collector Current (A) 0.6
Maximum DC Collector Current Range (A) 0.5 to 2
Maximum Collector Cut-Off Current (nA) 10
Minimum DC Current Gain 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Minimum DC Current Gain Range 50 to 120
Typical Input Capacitance (pF) 30(Max)
Typical Output Capacitance (pF) 8(Max)
Maximum Power Dissipation (mW) 400
Maximum Transition Frequency (MHz) 200(Min)
Maximum Turn-On Time (ns) 45
Maximum Turn-Off Time (ns) 100
Maximum Rise Time (ns) 40
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Mounting Through Hole
Package Height 5.33(Max)
PCB changed 3
Supplier Package TO-18
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 400 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
Collector-Emitter Saturation Voltage 2.6 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 10000
Mounting Styles Through Hole
Gain Bandwidth Product fT 200 MHz
Manufacturer Rectron
Brand Rectron
Maximum DC Collector Current 600 mA
DC Current Gain hFE Max 50
RoHS Details
Collector- Emitter Voltage VCEO Max 60 V
Packaging Bag
Part Status Unconfirmed
Type PNP
Subcategory Transistors
Technology Si
Pin Count 3
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 600 mA
Product Category Bipolar Transistors - BJT
Diameter 5.84(Max)
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