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RM12N500T2 Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Rectron | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Manufacturer | RECTRON | |
RoHS | Y | |
Qg - Gate Charge | 30 nC | |
Brand | Rectron | |
Channel Mode | Enhancement | |
Forward Transconductance - Min | 8 S | |
Mounting Styles | Through Hole | |
Factory Pack QuantityFactory Pack Quantity | 1000 | |
Minimum Operating Temperature | - 55 C | |
Unit Weight | 0.068784 oz | |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
Maximum Operating Temperature | + 150 C | |
Transistor Polarity | N-Channel | |
Pd - Power Dissipation | 101 W |
Vgs th - Gate-Source Threshold Voltage | 3 V | |
Typical Turn-On Delay Time | 11 ns | |
Vds - Drain-Source Breakdown Voltage | 500 V | |
Rds On - Drain-Source Resistance | 520 mOhms | |
Typical Turn-Off Delay Time | 55 ns | |
Id - Continuous Drain Current | 12 A | |
Packaging | Case - TO-220 | |
Capacitance | Input Capacitance (Ciss) - 1285pF | |
Subcategory | MOSFETs | |
Technology | Si | |
Configuration | Single | |
Number of Channels | 1 ChannelChannel | |
Voltage | Vdss - 500V | |
Rise Time | 5 ns | |
Product Type | MOSFET | |
Transistor Type | 1 N-Channel | |
Product Category | MOSFET |
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