Rectron RM150N60HD-W Single MOSFETs Transistors
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RM150N60HD-W Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Rectron | |
| Package / Case | TO263-2 | |
| Factory Pack QuantityFactory Pack Quantity | 800 | |
| Manufacturer | Rectron | |
| Brand | Rectron | |
| RoHS | Details | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Pd - Power Dissipation | 220 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement | |
| Qg - Gate Charge | 163 nC | |
| Rds On - Drain-Source Resistance | 4.5 mOhms | |
| Id - Continuous Drain Current | 150 A | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Number of Channels | 1 ChannelChannel | |
| Product Type | MOSFET | |
| Product Category | MOSFET |
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