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RMP8N70T2 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Rectron
Mounting Type Through Hole
Package / Case TO-220-3
Manufacturer RECTRON
RoHS Y
Vds - Drain-Source Breakdown Voltage 700 V
Typical Turn-On Delay Time 35 ns
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 147 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.068784 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1000
Mounting Styles Through Hole
Forward Transconductance - Min 7 S
Channel Mode Enhancement
Brand Rectron
Qg - Gate Charge 60 nC
Rds On - Drain-Source Resistance 1.6 Ohms
Typical Turn-Off Delay Time 130 ns
Id - Continuous Drain Current 8 A
Packaging Case - TO-220
Capacitance Input Capacitance (Ciss) - 1050pF
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Voltage Vdss - 700V
Rise Time 80 ns
Product Type MOSFET
Transistor Type 1 N-Channel
Product Category MOSFET
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