Renesas Electronics America 2SK1317-E Single MOSFETs Transistors
2.5A 7A
IN STOCK
: 20000
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2SK1317-E Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Renesas | |
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | PRSS0004ZE-A | |
| Current - Continuous Drain (Id) @ 25℃ | 2.5A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 100W Tc | |
| Turn Off Delay Time | 110 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 1999 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Pin Count | 4 |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 100W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 17 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 12 Ω @ 2A, 15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 10V | |
| Rise Time | 70ns | |
| Drain to Source Voltage (Vdss) | 1500V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 60 ns | |
| Continuous Drain Current (ID) | 2.5A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Pulsed Drain Current-Max (IDM) | 7A | |
| Nominal Vgs | 4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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2SK1317-E Documents
Download datasheets and manufacturer documentation for 2SK1317-E
- ConflictMineralStatementRenesas-company-44.pdf
- Datasheets2SK1317
- Environmental InformationRoHS Compliance
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