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HAT2092R-EL-E Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Renesas | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 50 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Pin Count | 8 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 15 ns | |
| Power - Max | 3W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 5.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | |
| Rise Time | 17ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 11A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.025Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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HAT2092R-EL-E Documents
Download datasheets and manufacturer documentation for HAT2092R-EL-E
- DatasheetsHAT2092R
- ConflictMineralStatementRenesas-company-44.pdf
- Environmental InformationRoHS Compliance
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