HAT2092R-EL-E Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Renesas
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 50 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Power - Max 3W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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