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HAT2165H-EL-E Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Renesas
Factory Lead Time 16 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 55A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 30W Tc
Turn Off Delay Time 60 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e4
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 5
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 65ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 9.5 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 220A
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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