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RJH60D2DPP-M0#T2 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Renesas
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.2V
Test Conditions 300V, 12A, 5 Ω, 15V
Turn Off Delay Time 85 ns
Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 27.2W
Base Part Number RJH60D
Pin Count 3
Element Configuration Single
Input Type Standard
Turn On Delay Time 32 ns
Power - Max 34W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 25A
Reverse Recovery Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 12A
IGBT Type Trench
Gate Charge 19nC
Td (on/off) @ 25°C 32ns/85ns
Switching Energy 100μJ (on), 160μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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RJH60D2DPP-M0#T2 Documents

Download datasheets and manufacturer documentation for   RJH60D2DPP-M0#T2

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