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RJH60F4DPQ-A0#T0 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Renesas
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.7V
Number of Elements 1 Element
Test Conditions 400V, 30A, 5 Ω, 15V
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 235.8W
Base Part Number RJH60F
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 235.8W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 90 ns
Turn On Time 195 ns
Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 30A
Turn Off Time-Nom (toff) 165 ns
IGBT Type Trench
Td (on/off) @ 25°C 45ns/85ns
Gate-Emitter Thr Voltage-Max 8V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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