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RJH65T14DPQ-A0#T0 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Renesas
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100A
Number of Elements 1 Element
Test Conditions 400V, 50A, 10 Ω, 15V
Operating Temperature 175°C TJ
Packaging Tube
Published 2017
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 250ns
Voltage - Collector Emitter Breakdown (Max) 650V
Turn On Time 68 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 50A
Turn Off Time-Nom (toff) 240 ns
IGBT Type Trench
Gate Charge 80nC
Td (on/off) @ 25°C 38ns/125ns
Switching Energy 1.3mJ (on), 1.2mJ (off)
RoHS Status ROHS3 Compliant
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