Renesas Electronics America Inc 2SK2727-E MOSFETs Transistors Arrays
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2SK2727-E Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Renesas | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Product Status | Active | |
| Package | Bulk | |
| Mfr | Renesas Electronics America Inc | |
| Package Description | SC-65, TO-3P, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Part Number | 2SK2727-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.23 | |
| Part Package Code | TO-3P |
| Drain Current-Max (ID) | 10 A | |
| Series | * | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| DS Breakdown Voltage-Min | 500 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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