Renesas Electronics America Inc BB304CDW-TL-E MOSFETs Transistors Arrays
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BB304CDW-TL-E Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Renesas | |
| Factory Lead Time | 1 Week | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Renesas Electronics America Inc | |
| Package | Bulk | |
| Product Status | Active | |
| Package Description | LEEAD FREE, MINIMOLD, SC-82A, SOT-343MOD, CMPAK-4 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Part Number | BB304CDW-TL-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.19 | |
| Part Package Code | SC-82 |
| Drain Current-Max (ID) | 0.025 A | |
| Series | * | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 12 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.05 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 24 dB |
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