Renesas Electronics Corporation TBB1010 Specialized Transistors
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TBB1010 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Renesas | |
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | MINIMOLD, CMPAK-6 | |
| Drain Current-Max (ID) | 0.03 A | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 6 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Feedback Cap-Max (Crss) | 0.05 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 25 dB |
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TBB1010 Documents
Download datasheets and manufacturer documentation for TBB1010
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