RF Micro Devices Inc FPD200P70 Specialized Transistors
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
FPD200P70 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | RFMD | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| JESD-609 Code | e4 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | GOLD |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | K BAND | |
| Power Dissipation Ambient-Max | 0.47 W | |
| Saturation Current | 1 | |
| Power Gain-Min (Gp) | 9 dB |
Select at least one checkbox above to show similar products in this category.
FPD200P70 Documents
Download datasheets and manufacturer documentation for FPD200P70
- Datasheetsad986b9902225afb875cf46a87f5ccfe.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ