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- DS1230AB-200
Rochester Electronics, LLC DS1230AB-200 Memory ICs
Tube 5V NVSRAM
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DS1230AB-200 Tech Specifications
| Category | Memory | |
| Manufacturer | Rochester Electronics | |
| Mounting Type | Through Hole | |
| Package / Case | 28-DIP Module (0.600, 15.24mm) | |
| Surface Mount | NO | |
| Memory Types | Non-Volatile | |
| Operating Temperature | 0°C~70°C TA | |
| Packaging | Tube | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 28Terminations | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | 10 YEARS DATA RETENTION PERIOD | |
| Voltage - Supply | 4.75V~5.25V | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 240 | |
| Number of Functions | 1Function |
| Supply Voltage | 5V | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 28 | |
| JESD-30 Code | R-XDMA-P28 | |
| Qualification Status | COMMERCIAL | |
| Supply Voltage-Max (Vsup) | 5.25V | |
| Supply Voltage-Min (Vsup) | 4.75V | |
| Memory Size | 256Kb 32K x 8 | |
| Operating Mode | ASYNCHRONOUS | |
| Memory Format | NVSRAM | |
| Memory Interface | Parallel | |
| Organization | 32KX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 200ns | |
| Memory Density | 262144 bit | |
| Access Time (Max) | 200 ns | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
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DS1230AB-200 Documents
Download datasheets and manufacturer documentation for DS1230AB-200
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