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EMA6DXV5T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Rochester Electronics
Mounting Type Surface Mount
Package / Case SOT-553
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish MATTE TIN
Additional Feature BUILT-IN BIAS RESISTOR
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
JESD-30 Code R-PDSO-F5
Qualification Status COMMERCIAL
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 230mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47k Ω
RoHS Status ROHS3 Compliant
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EMA6DXV5T1G Documents

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