EMZ1DXV6T1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Rochester Electronics
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN AND PNP
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 180MHz
Frequency - Transition 180MHz 140MHz
RoHS Status ROHS3 Compliant
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