FJNS4202RTA Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Rochester Electronics
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
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