Rochester Electronics, LLC MBT3904DW2T1G Arrays BJT Transistors
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
MBT3904DW2T1G Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Rochester Electronics | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Current-Collector (Ic) (Max) | 200mA | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Power - Max | 150mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | 2 NPN (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Transition Frequency | 300MHz | |
| Frequency - Transition | 300MHz | |
| Turn Off Time-Max (toff) | 250ns | |
| Turn On Time-Max (ton) | 70ns | |
| RoHS Status | ROHS3 Compliant |
Select at least one checkbox above to show similar products in this category.
MBT3904DW2T1G Documents
Download datasheets and manufacturer documentation for MBT3904DW2T1G
- DatasheetsONSM-S-A0001342262 Datasheet
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ