Rochester Electronics, LLC NTMD3N08LR2 MOSFETs Transistors Arrays
3.1W 80V
IN STOCK
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Mult. : 1
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NTMD3N08LR2 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Rochester Electronics | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2.3A | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 3.1W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 215m Ω @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Drain to Source Voltage (Vdss) | 80V | |
| Drain Current-Max (Abs) (ID) | 2.3A | |
| Drain-source On Resistance-Max | 0.215Ohm | |
| Pulsed Drain Current-Max (IDM) | 25A | |
| DS Breakdown Voltage-Min | 80V | |
| Avalanche Energy Rating (Eas) | 25 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | Non-RoHS Compliant |
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NTMD3N08LR2 Documents
Download datasheets and manufacturer documentation for NTMD3N08LR2
- DatasheetsONSMS17846 Datasheet ONSMS11272 Datasheet
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