SS8550BTA Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Rochester Electronics
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 1.5A
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
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