ROHM Semiconductor 2SB1188T100Q Single BJT Transistors
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2SB1188T100Q Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | ROHM Semiconductor | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | -32V | |
| Number of Elements | 1 Element | |
| hFEMin | 82 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | -32V | |
| Max Power Dissipation | 500mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | 2SB1188 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Power - Max | 2W | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 800mV | |
| Max Collector Current | 2A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 3V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Voltage - Collector Emitter Breakdown (Max) | 32V | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 32V | |
| Collector Base Voltage (VCBO) | -40V | |
| Emitter Base Voltage (VEBO) | -5V | |
| VCEsat-Max | 0.8 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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2SB1188T100Q Documents
Download datasheets and manufacturer documentation for 2SB1188T100Q
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