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2SC2412KT146Q Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 400mV
Number of Elements 1 Element
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 150mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SC2412
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Max Frequency 180MHz
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 150mA
VCEsat-Max 0.4 V
Height 1.1mm
Length 2.9mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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