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2SD1766T100R Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | ROHM Semiconductor | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 32V | |
| Number of Elements | 1 Element | |
| hFEMin | 82 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN COPPER | |
| Voltage - Rated DC | 32V | |
| Max Power Dissipation | 2W | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | 2SD1766 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-F3 | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 32V | |
| Max Collector Current | 2A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 3V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 32V | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 5V | |
| VCEsat-Max | 0.8 V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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2SD1766T100R Documents
Download datasheets and manufacturer documentation for 2SD1766T100R
- PCN Design/SpecificationMult Devices Marking 16/Apr/2018
- Datasheets2SD1766, 2SD1758, 2SD1862
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