DTA123EUAT106 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ROHM Semiconductor
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage -300mV
Number of Elements 1 Element
hFEMin 20
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTA123
Pin Count 3
Polarity PNP
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 2.2 k Ω
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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