DTC043EUBTL Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F3
Output Voltage 50mV
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Max Frequency 250MHz
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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