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DTC115EMT2L Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 82
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 20mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTC115
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 100 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 100 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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